| PART |
Description |
Maker |
| CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|
| FZT956TA UFZT956TA |
2 A, 200 V, PNP, Si, POWER TRANSISTOR
|
Diodes, Inc.
Zetex Semiconductor PLC
|
| 2SA1107 |
Silicon PNP Power Transistors MT-200 package
|
Savantic
|
| MJ3281A NH1302A |
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS
COMEPLEMENTARY NPN-PNP SILICON POWER BOPOLAR TRANSISTOR
|
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| MJ15001 MJ15002 ON1979 NH15002 |
15 A, 140 V, PNP, Si, POWER TRANSISTOR, TO-204AA
From old datasheet system
15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 200 WATTS
|
MOTOROLA INC
Motorola Inc
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| CSA1013 CSC2383 CSC2383O CSC2383R CSC2383Y CSA1013 |
0.900W General Purpose PNP Plastic Leaded Transistor. 160V Vceo, 1.000A Ic, 100 - 200 hFE
PNP/NPN COMPLEMENTARY PLANAR SILICON TRANSISTORS
|
Continental Device India Limited
Continental Device Indi...
|
| APT20M38SVFR APT20M38BVFRG APT20M38BVFR06 APT20M38 |
Power FREDFET; Package: D3 [S]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| 2N2894AC1B-JQRS.GRPB 2N2894AC1B-JQRS.GRPC 2N2894AC |
200 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR HERMETIC SEALED, CERAMIC, SOT-23 COMPATIBLE, 3 PIN
HIGH SPEED PNP SILICON BIPOLAR TRANSISTOR
|
TT electronics Semelab, Ltd.
Seme LAB
SEMELAB LTD
|
| SBTC-2-20_20L SBTC-2-20 SBTC-2-20L SBTC-2-2020L |
Power Splitter/Combiners 2 Way-050з 200 to 2000 MHz 200 MHz - 2000 MHz RF/MICROWAVE COMBINER, 2.2 dB INSERTION LOSS
Power Splitter/Combiners 2 Way-0° 50 200 to 2000 MHz
Power Splitter/Combiners 2 Way-0∑ 50з 200 to 2000 MHz
Power Splitter/Combiners 2 Way-0 50 200 to 2000 MHz
|
MINI[Mini-Circuits]
|
| APT20M22LVFR APT20M22LVFRG |
Power FREDFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp.
Advanced Power Technology
|
